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December 2013
FCD5N60
N-Channel SuperFET ? MOSFET
600 V, 4.6 A, 950 m Ω
Features
? 650 V @ T J = 150°C
? Typ. R DS(on) = 810 m Ω
? Ultra Low Gate Charge (Typ. Q g = 16 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 32 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? LCD/LED TV and Monitor
? Lighting
? Solar Inverter
? AC-DC Power Supply
D
D
G
S
D-PAK
G
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
Parameter
FCD5N60TM /
FCD5N60TM_WS
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
600
4.6
2.9
V
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
13.8
±30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
159
4.6
5.4
4.5
54
0.43
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
Thermal Characteristics
Symbol
Parameter
FCD5N60TM /
FCD5N60TM_WS
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.3
83
o
C/W
?2008 Fairchild Semiconductor Corporation
FCD5N60 Rev. C1
1
www.fairchildsemi.com
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